High Thermal Conductive B4C Micron Powder used for Semiconductor Components

Specification of high purity boron carbide :

CAS No:12069-32-8

ENINEC No.:235-111-5
Appearance:black grey Powder

Size:50nm, 100nm, 500nm, 1-3um, 10-100um, Purity:99% Shape:cubic

Application of high purity boron carbide:

1. A neutron-absorbing material and radiation: element B has a neutron absorption cross-section of up to 600 barn, and is a nuclear reactor deceleration component-the main choice is the radiation component of the nuclear reactor control rod.

2. Composite armor material: Take advantage of its lightness, super-hardness and high modulus as a lightweight body armor and bullet-proof armor material. Using B4C bulletproof agricultural production technology, compared with the same type of steel, the weight of the bulletproof vest is reduced by more than 50%. The B4C nano powder is also an important land for armored vehicles, helicopter gunships and armored bulletproof passenger aircraft.

3. Semiconductor component and thermoelectric component industry: Boron carbide ceramics with semiconductor characteristics and good thermal conductivity can be used as high-temperature semiconductor components, as well as gas distribution plates, focusing rings, microwave or infrared windows, and DC plugs in the semiconductor industry. B4C and C high temperature thermocouples can be used in combination, and the operating temperature can reach 2300℃, and they can also be used as anti-radiation thermoelectric elements.

4. Mechanical seals: Super hard B4C and excellent wear resistance make it an important material for mechanical seals. Because of its high cost, it is mainly used for mechanical seals in some special occasions.

5. Nozzle material: Boron carbide has high hardness and good wear resistance. It is an important nozzle material. Boron carbide nozzles have the advantages of long life, relatively low cost, time saving, and high efficiency. The life of the boron carbide nozzle is several times that of the alumina nozzle, which is many times longer than that of WC and SiC.